| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Toshiba Semiconductor |
2SC5810
|
134Kb/5P |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
|
2SC5810
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
Sanyo Semicon Device |
2SC5811
|
40Kb/3P |
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
|
Hitachi Semiconductor |
2SC5812
|
94Kb/10P |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
Renesas Technology Corp |
2SC5812
|
208Kb/9P |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
|
2SC5812WG-TR-E
|
208Kb/9P |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
Panasonic Semiconductor |
2SC5813
|
81Kb/3P |
Silicon NPN epitaxial planar type
|
Isahaya Electronics Cor... |
2SC5814
|
195Kb/5P |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type
|
|
2SC5814
|
157Kb/2P |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
|
2SC5814
|
157Kb/2P |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
|
2SC5815
|
195Kb/5P |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type
|
|
2SC5815
|
97Kb/2P |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXAIL TYPE
|
|
2SC5815
|
97Kb/2P |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXAIL TYPE
|
|
2SC5816
|
195Kb/5P |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type
|
|
2SC5817
|
195Kb/5P |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type
|
Toshiba Semiconductor |
2SC5819
|
147Kb/5P |
High-Speed Switching Applications
|
Renesas Technology Corp |
2SC5800
|
109Kb/24P |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE
July 2001 |
|
2SC5800
|
274Kb/8P |
NPN SILICON + SiGe RF TWIN TRANSISTOR
2004 |
|
2SC5800
|
259Kb/18P |
NPN SILICON RF TWIN TRANSISTOR
2002 |
|
2SC5800
|
328Kb/19P |
NPN SILICON RF TWIN TRANSISTOR
2002 |
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