| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Calogic, LLC |
3N190
|
27Kb/2P |
Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
|
Linear Integrated Syste... |
3N190
|
274Kb/2P |
P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
|
Intersil Corporation |
3N190
|
75Kb/2P |
DUAL P CHANNEL ENHANCEMENT MODE MOSFET
|
|
3N190
|
4Mb/122P |
P-CHANNEL JFET
|
New Jersey Semi-Conduct... |
3N190
|
71Kb/1P |
DUAL MATCHED P-CHANNEL ENHANCEMENT MODE MOS FETS
|
Micross Components |
3N190
|
295Kb/1P |
a monolithic dual enhancement mode P-Channel Mosfet
|
Linear Integrated Syste... |
3N190-1
|
274Kb/2P |
P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
|
Calogic, LLC |
3N190-91
|
27Kb/2P |
Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
|
Linear Integrated Syste... |
3N190
|
262Kb/2P |
P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
|
Calogic, LLC |
3N190
|
37Kb/2P |
Dual P-Channel Enhancement Mode MOSFET
|
Micross Components |
3N190_TO-78
|
295Kb/1P |
a monolithic dual enhancement mode P-Channel Mosfet
|
|
3N191_TO-78
|
295Kb/1P |
a monolithic dual enhancement mode P-Channel Mosfet
|
New Jersey Semi-Conduct... |
3N100
|
148Kb/1P |
NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
|
Motorola, Inc |
3N100E
|
262Kb/10P |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
|
|
3N100E
|
206Kb/8P |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
|
New Jersey Semi-Conduct... |
3N101
|
148Kb/1P |
NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
|
Infineon Technologies A... |
3N1012
|
192Kb/9P |
OptiMOS-T Power-Transistor
Rev. 1.0 2008-02-12 |
New Jersey Semi-Conduct... |
3N102
|
148Kb/1P |
NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
|
|
3N103
|
148Kb/1P |
NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
|
|
3N104
|
148Kb/1P |
NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
|
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