| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Unisonic Technologies |
1N4148G-AE3-R
|
218Kb/4P |
HIGH-SPEED SWITCHING DIODE
|
|
1N4148G-AE3-R
|
320Kb/5P |
HIGH-SPEED SWITCHING DIODE
|
|
1N4148G-AE3-R
|
298Kb/4P |
HIGH-SPEED SWITCHING DIODE
|
|
MMBD4148G-AE3-R
|
295Kb/4P |
HIGH-SPEED SWITCHING DIODE
|
|
MMBT5088G-AE3-R
|
301Kb/6P |
NPN GENERAL PURPOSE AMPLIFIER
|
|
MMBT5088G-AE3-R
|
336Kb/7P |
NPN GENERAL PURPOSE AMPLIFIER
|
|
SLVU2.8G-AE3-R
|
81Kb/3P |
LOW VOLTAGE DIODE FOR ESD AND LATCH-UP PROTECTION
|
|
UK1398G-AE3-R
|
226Kb/4P |
N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING
|
|
UK1398G-AE3-R
|
230Kb/5P |
N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING
|
|
UN1518G-AE3-R
|
178Kb/3P |
POWER (SWITCHING) TRANSISTOR
|
|
UN1518G-AE3-R
|
193Kb/3P |
POWER (SWITCHING) TRANSISTOR
|
|
UP2518G-AE3-R
|
114Kb/3P |
LOW VCE(SAT) PNP SILICON POWER TRANSISTORS
|
|
UP2518G-AE3-R
|
114Kb/3P |
POWER TRANSISTORS
|
|
UT2308G-AE3-R
|
129Kb/3P |
N-CHANNEL ENHANCEMENT MODE
|
|
UT2308G-AE3-R
|
158Kb/3P |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
|
|
UT3418G-AE3-R
|
149Kb/3P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
|
UT3418G-AE3-R
|
173Kb/3P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
VBsemi Electronics Co.,... |
UT3418G-AE3-R
|
492Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
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