| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Advanced Power Electron... |
AP09N90CW-HF
|
65Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP09N90CW-HF
|
65Kb/4P |
Simple Drive Requirement
|
|
AP09N90CW-HF
|
101Kb/5P |
Simple Drive Requirement
|
|
AP09N90W
|
79Kb/4P |
N-CHANNEL ENHANCEMENT MODE
|
|
AP09N90W-HF
|
100Kb/5P |
Fast Switching Characteristic
|
|
AP09N90W
|
103Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP09N90W
|
103Kb/4P |
Simple Drive Requirement
|
|
AP09N20BGH-HF
|
99Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
SHENZHEN DOINGTER SEMIC... |
AP09N20BGH-HF
|
827Kb/5P |
N-Channel MOSFET uses advanced trench technology
|
Advanced Power Electron... |
AP09N20BGH-HF
|
99Kb/4P |
Simple Drive Requirement
|
|
AP09N20BGH-HF
|
98Kb/5P |
Fast Switching Characteristics
|
|
AP09N20BGI-HF
|
64Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP09N20BGI-HF
|
64Kb/4P |
Simple Drive Requirement
|
|
AP09N20BGP-HF
|
63Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP09N20BGP-HF
|
63Kb/4P |
Simple Drive Requirement
|
|
AP09N20BGS-HF
|
56Kb/4P |
Simple Drive Requirement Lower Gate Charge
|
|
AP09N20BGS-HF
|
56Kb/4P |
Simple Drive Requirement
|
|
AP09N20H
|
78Kb/4P |
N-CHANNEL ENHANCEMENT MODE
201112031 |
|
AP09N20H,J-HF
|
222Kb/6P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP09N20H-HF
|
222Kb/6P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
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