| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Advanced Power Electron... |
AP9565GEH
|
136Kb/4P |
Simple Drive Requirement, Lower On-resistance
|
|
AP9565GEH
|
136Kb/4P |
Simple Drive Requirement
|
 SHENZHEN DOINGTER SEMIC... |
AP9565GEJ
|
548Kb/4P |
P-Channel MOSFET uses advanced trench technology
|
 Advanced Power Electron... |
AP9565GEJ
|
136Kb/4P |
Simple Drive Requirement
|
|
AP9565GEM-HF
|
66Kb/5P |
Fast Switching Characteristic
|
|
AP9565GEM
|
95Kb/4P |
Simple Drive Requirement
|
|
AP9565AGH
|
102Kb/4P |
Lower Gate Charge, Simple Drive Requirement
|
|
AP9565AGH-HF
|
106Kb/5P |
Fast Switching Characteristic
|
|
AP9565AGH-HF
|
103Kb/4P |
Simple Drive Requirement
|
|
AP9565AGH-HF
|
106Kb/5P |
Fast Switching Characteristic
|
|
AP9565AGJ
|
102Kb/4P |
Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
|
|
AP9565AGJ-HF
|
106Kb/5P |
Fast Switching Characteristic
|
|
AP9565BGH,J-HF
|
109Kb/4P |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP9565BGH-HF
|
102Kb/5P |
Simple Drive Requirement
|
|
AP9565BGH-HF
|
103Kb/4P |
Simple Drive Requirement
|
|
AP9565BGH-HF
|
102Kb/5P |
Simple Drive Requirement
|
|
AP9565BGJ-HF
|
102Kb/5P |
Simple Drive Requirement
|
|
AP9565BGM-HF
|
78Kb/2P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP9560GH-HF
|
98Kb/4P |
Low On-resistance, Simple Drive Requirement
|
|
AP9560GH-HF
|
98Kb/4P |
Simple Drive Requirement
|