| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Microsemi Corporation |
APT14F100B
|
420Kb/4P |
N-Channel FREDFET
|
|
APT14F100S
|
129Kb/4P |
N-Channel FREDFET 1000V, 14A, 1.00廓 Max, trr ??40ns
|
|
APT14F100S
|
420Kb/4P |
N-Channel FREDFET
|
Advanced Power Technolo... |
APT14050JVFR
|
135Kb/4P |
POWER MOS V FREDFET
|
Microsemi Corporation |
APT14M100B
|
263Kb/4P |
N-Channel MOSFET
|
|
APT14M100B
|
133Kb/4P |
N-Channel MOSFET
|
Inchange Semiconductor ... |
APT14M100B
|
337Kb/2P |
isc N-Channel MOSFET Transistor
|
Microsemi Corporation |
APT14M100B
|
133Kb/4P |
N-Channel MOSFET
|
|
APT14M100S
|
263Kb/4P |
N-Channel MOSFET
|
|
APT14M100S
|
133Kb/4P |
N-Channel MOSFET
|
|
APT14M120B
|
402Kb/4P |
N-Channel MOSFET
|
|
APT14M120B
|
122Kb/4P |
N-Channel MOSFET 1200V, 14A, 1.10廓 Max
|
Inchange Semiconductor ... |
APT14M120B
|
337Kb/2P |
isc N-Channel MOSFET Transistor
|
Microsemi Corporation |
APT14M120B
|
122Kb/4P |
N-Channel MOSFET 1200V, 14A, 1.10廓 Max
|
|
APT14M120S
|
402Kb/4P |
N-Channel MOSFET
|
|
APT14M120S
|
122Kb/4P |
N-Channel MOSFET 1200V, 14A, 1.10廓 Max
|
Inchange Semiconductor ... |
APT100-101DN
|
326Kb/2P |
isc N-Channel MOSFET Transistor
|
Advanced Power Technolo... |
APT1001
|
35Kb/2P |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
|
|
APT1001
|
50Kb/4P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
Inchange Semiconductor ... |
APT1001R1AN
|
309Kb/2P |
isc N-Channel MOSFET Transistor
|
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