| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Infinite Electronics In... |
BC30
|
49Kb/1P |
45 BEECHWOOD DRIVE NORTH ANDOVER, MA 01845
2012-9-24 |
Micro Electronics |
BC300
|
122Kb/2P |
PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES
|
Central Semiconductor C... |
BC300
|
56Kb/1P |
Small Signal Transistors
|
Seme LAB |
BC300
|
15Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO39
|
Continental Device Indi... |
BC300
|
133Kb/3P |
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
|
List of Unclassifed Man... |
BC300
|
2Mb/31P |
SEMICONDUCTORS
|
Seme LAB |
BC300-4
|
15Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO39
|
|
BC300-6
|
15Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO39
|
Micro Electronics |
BC301
|
122Kb/2P |
PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES
|
Central Semiconductor C... |
BC301
|
56Kb/1P |
Small Signal Transistors
|
Seme LAB |
BC301
|
15Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO39
|
Continental Device Indi... |
BC301
|
133Kb/3P |
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
|
List of Unclassifed Man... |
BC301
|
45Kb/2P |
BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs
|
Seme LAB |
BC301-4
|
15Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO39
|
|
BC301-5
|
15Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO39
|
|
BC301-6
|
16Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO39
|
Shenzhen Bencent Electr... |
BC301N-D
|
190Kb/3P |
Gas Discharge Tube
|
Micro Electronics |
BC302
|
122Kb/2P |
PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES
|
Central Semiconductor C... |
BC302
|
56Kb/1P |
Small Signal Transistors
|
Seme LAB |
BC302
|
15Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO39
|
German ▼ 
English
Chinese
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand