| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Axiomtek Co., Ltd. |
CEM860DG-B810E
|
275Kb/1P |
2 DDR3-1066/1333 SO-DIMMs max. up to 16 GB
|
|
CEM860DG-I3-2340UE
|
275Kb/1P |
2 DDR3-1066/1333 SO-DIMMs max. up to 16 GB
|
|
CEM860DG-I5-2515E
|
275Kb/1P |
2 DDR3-1066/1333 SO-DIMMs max. up to 16 GB
|
|
CEM860DG-I7-2610UE
|
275Kb/1P |
2 DDR3-1066/1333 SO-DIMMs max. up to 16 GB
|
|
CEM860DG-I7-2610UEWT
|
275Kb/1P |
2 DDR3-1066/1333 SO-DIMMs max. up to 16 GB
|
|
CEM860DG-I7-2715QE
|
275Kb/1P |
2 DDR3-1066/1333 SO-DIMMs max. up to 16 GB
|
|
CEM860
|
275Kb/1P |
2 DDR3-1066/1333 SO-DIMMs max. up to 16 GB
|
|
CEM860
|
267Kb/1P |
COM Express Type 6 Module with Intel Core i7/i5/i3 and Intel QM67
|
|
CEM820
|
341Kb/1P |
Socket 478 Intel Pentium M COM Express Type 2 Module with Intel 915GME/910GMLE ICH6M Chipset
|
Chino-Excel Technology |
CEM8206
|
61Kb/5P |
Dual N-Channel Enhancement Mode Field Effect Transistor
|
|
CEM8207
|
56Kb/5P |
Dual N-Channel Enhancement Mode Field Effect Transistor
|
|
CEM8208
|
396Kb/4P |
Dual N-Channel Enhancement Mode Field Effect Transistor
|
SHENZHEN DOINGTER SEMIC... |
CEM8208
|
1Mb/5P |
Dual N-Channel MOSFET uses advanced trench technology
|
CET-MOS Technology Corp... |
CEM8208
|
609Kb/4P |
Dual N-Channel Enhancement Mode Field Effect Transistor
Rev 4. 2007.Oct. |
Axiomtek Co., Ltd. |
CEM820VG
|
341Kb/1P |
Socket 478 Intel Pentium M COM Express Type 2 Module with Intel 915GME/910GMLE ICH6M Chipset
|
|
CEM820VG-1GE
|
341Kb/1P |
Socket 478 Intel Pentium M COM Express Type 2 Module with Intel 915GME/910GMLE ICH6M Chipset
|
|
CEM830
|
210Kb/1P |
8 USB 2.0 ports
|
|
CEM831
|
244Kb/1P |
19 lanes for PCIe
|
Chino-Excel Technology |
CEM8311
|
140Kb/4P |
Dual P-Channel Enhancement Mode Field Effect Transistor
|
CET-MOS Technology Corp... |
CEM8311
|
419Kb/5P |
Dual P-Channel Enhancement Mode Field Effect Transistor
Rev 1. 2006.Jan |
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