Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Chino-Excel Technology |
CEP6030L
|
516Kb/5P |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
CEP6030LS2
|
530Kb/5P |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
CEP6031L
|
513Kb/5P |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
CEP6031LS2
|
531Kb/5P |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
SHENZHEN DOINGTER SEMIC... |
CEP6036
|
1Mb/4P |
N-Channel MOSFET uses advanced trench technology
|
Chino-Excel Technology |
CEP6036
|
427Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
|
CET-MOS Technology Corp... |
CEP6036L
|
695Kb/5P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 2. 2018.Jan |
Chino-Excel Technology |
CEP603AL
|
515Kb/5P |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
CEP603ALS2
|
529Kb/5P |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
CEP6020P
|
494Kb/5P |
Single P-Channel Enhancement Mode MOSFET
|
CET-MOS Technology Corp... |
CEP6026AL
|
463Kb/5P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 1. 2022.Sep |
CEP6040SL
|
410Kb/5P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 2. 2021.Aug |
Chino-Excel Technology |
CEP6042
|
427Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
|
CET-MOS Technology Corp... |
CEP6042
|
648Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 2. 2012.Dec |
CEP6044L
|
527Kb/5P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 2. 2017.Jan |
CEP6056
|
473Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 2. 2011.Dec |
Chino-Excel Technology |
CEP6056
|
401Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
|
CET-MOS Technology Corp... |
CEP6056L
|
653Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 2. 2015.Nov |
Chino-Excel Technology |
CEP6060
|
510Kb/5P |
N-Channel Enhancement Mode Field Effect Transistor
|
CET-MOS Technology Corp... |
CEP6060L
|
544Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 3. 2011.Jun |