| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Continental Device Indi... |
CJD81
|
131Kb/5P |
NPN SILICON POWER TRANSISTOR
|
 ZP Semiconductor |
CJD01N60
|
676Kb/3P |
Plastic-Encapsulate MOSFETS
|
|
CJD01N65B
|
750Kb/3P |
Plastic-Encapsulate MOSFETS
|
|
CJD01N80
|
710Kb/3P |
Plastic-Encapsulate MOSFETS
|
 Jiangsu Changjiang Elec... |
CJD02N60
|
1Mb/4P |
N-Channel Power MOSFET
|
 ZP Semiconductor |
CJD02N60-TO251-3L
|
664Kb/3P |
Plastic-Encapsulate MOSFETS
|
|
CJD02N60-TO251S
|
694Kb/3P |
Plastic-Encapsulate MOSFETS
|
 Jiangsu Changjiang Elec... |
CJD02N65
|
1Mb/4P |
N-Channel Power MOSFET
|
 ZP Semiconductor |
CJD02N65-TO251-3L
|
681Kb/3P |
Plastic-Encapsulate MOSFETS
|
|
CJD02N65-TO251S
|
725Kb/3P |
Plastic-Encapsulate MOSFETS
|
|
CJD04N60
|
889Kb/3P |
Plastic-Encapsulate MOSFETS
|
 Jiangsu Changjiang Elec... |
CJD04N60
|
1Mb/4P |
600V N-Channel Power MOSFET
|
 ZP Semiconductor |
CJD04N60A
|
805Kb/3P |
Plastic-Encapsulate MOSFETS
|
 Jiangsu Changjiang Elec... |
CJD04N60A
|
945Kb/4P |
N-Channel Power MOSFET
|
 ZP Semiconductor |
CJD04N60B
|
701Kb/3P |
Plastic-Encapsulate MOSFETS
|
 Jiangsu Changjiang Elec... |
CJD04N60B
|
756Kb/4P |
600V N-Channel Power MOSFET
|
 ZP Semiconductor |
CJD04N65
|
835Kb/3P |
Plastic-Encapsulate MOSFETS
|
 Jiangsu Changjiang Elec... |
CJD04N65
|
1Mb/4P |
N-Channel Power MOSFET
|
 ZP Semiconductor |
CJD04N65A
|
579Kb/2P |
N -Channel P ower MOSFET
|
|
CJD05N60B
|
603Kb/2P |
N -Channel P ower MOSFET
|