| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Chicago Miniature Lamp,... |
CM45
|
218Kb/1P |
T-3 1/4 Miniature Bayonet Base
|
 Bourns Electronic Solut... |
CM45
|
419Kb/7P |
SMT Chip Inductors
|
|
CM45
|
449Kb/9P |
SMT Chip Inductors
|
 Visual Communications C... |
CM45
|
52Kb/1P |
Miniature Bayonet Base
|
 New Jersey Semi-Conduct... |
CM45-12A
|
46Kb/1P |
NPN SILICON RF POWER TRANSISTOR
|
 Advanced Semiconductor |
CM45-28
|
15Kb/1P |
NPN SILICON RF POWER TRANSISTOR
|
 Mitsubishi Electric Sem... |
CM450DX-24A
|
131Kb/7P |
IGBT MODULES HIGH POWER SWITCHING USE
|
|
CM450DX-24S
|
569Kb/9P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
 Powerex Power Semicondu... |
CM450DX-24S
|
1Mb/9P |
Dual IGBT NX-Series Module 450 Amperes/1200 Volts
|
 Inchange Semiconductor ... |
CM450DX-24S
|
428Kb/6P |
IGBT Module
|
 Mitsubishi Electric Sem... |
CM450DX-24S1
|
745Kb/10P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
 Powerex Power Semicondu... |
CM450DX-34SA
|
1Mb/9P |
Dual IGBT NX-Series Module 450 Amperes/1700 Volts
|
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CM450DXL-34SA
|
1Mb/9P |
Dual IGBT NX-Series Module 450 Amperes/1700 Volts
|
 Mitsubishi Electric Sem... |
CM450DY-24S
|
589Kb/9P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
 Powerex Power Semicondu... |
CM450DY-24S
|
885Kb/6P |
Powerex Dual IGBTMOD Modules are designed for use in switching applications.
|
 Mitsubishi Electric Sem... |
CM450HA-5F
|
44Kb/4P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
 Powerex Power Semicondu... |
CM450HA-5F
|
77Kb/4P |
Trench Gate Design Single IGBTMOD??450 Amperes/250 Volts
|
 Mitsubishi Electric Sem... |
CM450HA-5F
|
51Kb/4P |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
|
CM450HA-5F
|
51Kb/4P |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
 ABC Taiwan Electronics ... |
CM4532100KL
|
583Kb/8P |
WOUND CHIP INDUCTOR
|