| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Diodes Incorporated |
DFN1006-3
|
776Kb/32P |
PACKAGE OUTLINE DIMENSIONS
AP02002 Rev. 44 |
Nexperia B.V. All right... |
DFN1006B-3
|
836Kb/13P |
PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓
|
|
DFN1006B-3
|
842Kb/12P |
PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓
|
|
DFN1006B-3
|
755Kb/13P |
PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 1 k廓
|
|
DFN1006B-3
|
721Kb/12P |
NPN resistor-equipped transistor; R1 = 22 k廓, R2 = open
|
|
DFN1006B-3
|
960Kb/12P |
PNP resistor-equipped transistor; R1 = 100 k廓, R2 = 100 k廓
|
|
DFN1006B-3
|
616Kb/12P |
PNP resistor-equipped transistor; R1 = 100 k廓, R2 = open
|
|
DFN1006B-3
|
628Kb/13P |
PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 10 k廓
|
|
DFN1006B-3
|
845Kb/12P |
PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓
|
|
DFN1006B-3
|
617Kb/12P |
PNP resistor-equipped transistor; R1 = 10 k廓, R2 = open
|
|
DFN1006B-3
|
842Kb/12P |
PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 47 k廓
|
Diodes Incorporated |
DFN1006H4-2
|
174Kb/12P |
SUGGESTED PAD LAYOUT
AP02001 Rev. 38 |
|
DFN1006H4-2
|
776Kb/32P |
PACKAGE OUTLINE DIMENSIONS
AP02002 Rev. 44 |
|
DFN1006H4-3
|
776Kb/32P |
PACKAGE OUTLINE DIMENSIONS
AP02002 Rev. 44 |
Alpha & Omega Semicondu... |
DFN1.2X1.1_6L
|
64Kb/1P |
CONTROLLING DIMENSION IS MILLIMETER
|
Global Mixed-mode Techn... |
DFN1.6X1.6-6
|
190Kb/1P |
Package Outline
|
Nisshinbo Micro Devices... |
DFN1212-6-GK
|
2Mb/50P |
150 mA 0.4 V Output & Ultra-Low Supply Current Voltage Regulator
Ver.1.1 |
Analog Microelectronics |
DFN-10B
|
52Kb/1P |
(3x3x0.75mm) MIN 0.700 MAX 0.800
|
|
DFN-10B
|
34Kb/1P |
(3x3x0.75mm) Carrier Width (W) 12.0+-0.1 mm
|
Protek Devices |
DFN-2-0402
|
280Kb/5P |
package outline & pad layout
|
German ▼ 
English
Chinese
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand