| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Unisonic Technologies |
F2N60L-TN3-T
|
229Kb/6P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
|
F2N60G-TN3-R
|
229Kb/6P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
|
F2N60G-TN3-T
|
229Kb/6P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
|
F2N60
|
229Kb/6P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
 Jiangsu Donghai Semicon... |
F2N60
|
1Mb/13P |
2A 600V N-channel Enhancement Mode Power MOSFET
|
|
F2N60
|
1Mb/13P |
2A 600V N-channel Enhancement Mode Power MOSFET
|
|
F2N60
|
1Mb/13P |
2A 600V N-channel Enhancement Mode Power MOSFET
|
|
F2N60
|
1Mb/13P |
2A 600V N-channel Enhancement Mode Power MOSFET
|
|
F2N60
|
1Mb/13P |
2A 600V N-channel Enhancement Mode Power MOSFET
|
|
F2N60
|
1Mb/13P |
2A 600V N-channel Enhancement Mode Power MOSFET
|
|
F2N65
|
1Mb/12P |
2A 650V N-channel Enhancement Mode Power MOSFET
|
|
F2N65
|
1Mb/12P |
2A 650V N-channel Enhancement Mode Power MOSFET
|
|
F2N65
|
1Mb/12P |
2A 650V N-channel Enhancement Mode Power MOSFET
|
|
F2N65
|
1Mb/12P |
2A 650V N-channel Enhancement Mode Power MOSFET
|
|
F2N65
|
1Mb/12P |
2A 650V N-channel Enhancement Mode Power MOSFET
|
 Goodwork Semiconductor ... |
F2N10A
|
174Kb/3P |
N-Channel Enhancement MOSFET
|