| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Shenzhen Huazhimei Semi... |
HM4618SP
|
665Kb/6P |
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
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|
HM4610
|
937Kb/9P |
1A Current Limited Load Switch
|
|
HM4611B
|
714Kb/9P |
N and P-Channel Enhancement Mode Power MOSFET
|
|
HM4611C
|
822Kb/9P |
N and P-Channel Enhancement Mode Power MOSFET
|
|
HM4612
|
721Kb/5P |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
HM4614B
|
1Mb/5P |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
HM4606C
|
1Mb/11P |
N and P-Channel Enhancement Mode Power MOSFET
|
|
HM4620D
|
879Kb/11P |
N and P-Channel Enhancement Mode Power MOSFET
|
|
HM4622A
|
1Mb/11P |
N and P-Channel Enhancement Mode Power MOSFET
|
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HM4630D
|
1Mb/11P |
N and P-Channel Enhancement Mode Power MOSFET
|
 List of Unclassifed Man... |
HM4-6116-2
|
227Kb/8P |
2K x 8 GENERAL PURPOSE CMOS SRAM
|
|
HM4-6116-5
|
227Kb/8P |
2K x 8 GENERAL PURPOSE CMOS SRAM
|
|
HM4-6116-6
|
227Kb/8P |
2K x 8 GENERAL PURPOSE CMOS SRAM
|
|
HM4-6116-9
|
227Kb/8P |
2K x 8 GENERAL PURPOSE CMOS SRAM
|
|
HM4-6116B-2
|
227Kb/8P |
2K x 8 GENERAL PURPOSE CMOS SRAM
|
|
HM4-6116B-5
|
227Kb/8P |
2K x 8 GENERAL PURPOSE CMOS SRAM
|
|
HM4-6116B-6
|
227Kb/8P |
2K x 8 GENERAL PURPOSE CMOS SRAM
|
|
HM4-6116B-9
|
227Kb/8P |
2K x 8 GENERAL PURPOSE CMOS SRAM
|
|
HM4-6116L-2
|
227Kb/8P |
2K x 8 GENERAL PURPOSE CMOS SRAM
|
|
HM4-6116L-5
|
227Kb/8P |
2K x 8 GENERAL PURPOSE CMOS SRAM
|