| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Toshiba Semiconductor |
HN1C01F
|
155Kb/2P |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
|
HN1C01F
|
232Kb/4P |
Audio-Frequency General-Purpose Amplifier Applications
|
|
HN1C01F
|
249Kb/4P |
Audio-Frequency General-Purpose Amplifier Applications
|
|
HN1C01F
|
243Kb/4P |
Audio-Frequency General-Purpose Amplifier Applications
|
|
HN1C01F
|
243Kb/4P |
Audio-Frequency General-Purpose Amplifier Applications
|
|
HN1C01F-GRTE85LF
|
249Kb/4P |
Audio-Frequency General-Purpose Amplifier Applications
|
|
HN1C01FE
|
194Kb/3P |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
|
HN1C01FU
|
155Kb/2P |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
|
HN1C01FU
|
236Kb/4P |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
|
HN1C01FU-GR
|
243Kb/4P |
Audio-Frequency General-Purpose Amplifier Applications
|
|
HN1C01FU-Y
|
243Kb/4P |
Audio-Frequency General-Purpose Amplifier Applications
|
|
HN1C01FU
|
236Kb/4P |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
|
HN1C01F
|
232Kb/4P |
Audio-Frequency General-Purpose Amplifier Applications
|