| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Hi-Sincerity Mocroelect... |
HSD880
|
34Kb/3P |
NPN EPITAXIAL PLANAR TRANSISTOR
|
|
HSD882S
|
42Kb/4P |
NPN EPITAXIAL PLANAR TRANSISTOR
|
|
HSD882S
|
59Kb/5P |
The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver.
|
|
HSD879
|
30Kb/3P |
SILICON NPN EPITAXIAL TYPE TRANSISTOR
|
|
HSD879D
|
32Kb/3P |
SILICON NPN EPITAXIAL TYPE TRANSISTOR
|
Renesas Technology Corp |
HSD88
|
143Kb/5P |
Silicon Schottky Barrier Diode for Detector, Mixer
|
Guangdong Huixin Electr... |
HSD8D12V
|
1Mb/4P |
Unidirectional TVS Diodes
|
|
HSD8D15V
|
1Mb/4P |
Unidirectional TVS Diodes
|
|
HSD8D18V
|
1Mb/4P |
Unidirectional TVS Diodes
|
|
HSD8D24V
|
1Mb/4P |
Unidirectional TVS Diodes
|
|
HSD8D36V
|
1Mb/4P |
Unidirectional TVS Diodes
|
|
HSD8D3V3
|
1Mb/4P |
Unidirectional TVS Diodes
|
|
HSD8D5V0
|
1Mb/4P |
Unidirectional TVS Diodes
|
|
HSD8D8V0
|
1Mb/4P |
Unidirectional TVS Diodes
|
Hanbit Electronics Co.,... |
HSD8M32B4
|
108Kb/11P |
Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) 144pin SO-DIMM based on 4Mx16, 4Banks, 4K Ref., 3.3V
|
|
HSD8M32B4-10
|
108Kb/11P |
Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) 144pin SO-DIMM based on 4Mx16, 4Banks, 4K Ref., 3.3V
|
|
HSD8M32B4-10L
|
108Kb/11P |
Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) 144pin SO-DIMM based on 4Mx16, 4Banks, 4K Ref., 3.3V
|
|
HSD8M32B4-12
|
108Kb/11P |
Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) 144pin SO-DIMM based on 4Mx16, 4Banks, 4K Ref., 3.3V
|
|
HSD8M32B4-13
|
108Kb/11P |
Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) 144pin SO-DIMM based on 4Mx16, 4Banks, 4K Ref., 3.3V
|
|
HSD8M32F4V
|
82Kb/11P |
Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) SMM based on 8Mx8, 4Banks, 4K Ref., 3.3V
|
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