| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 IP SEMICONDUCTOR CO., L... |
IPT1206-CEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-CEB
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-BEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-BEB
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-BEF
|
237Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-SEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-SEB
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-SEF
|
237Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-TEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-TEB
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-TEF
|
237Kb/4P |
High current density due to double mesa technology
|
|
IPT1208-BEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1208-BEB
|
225Kb/4P |
High current density due to double mesa technology
|
|
IPT1208-BEF
|
234Kb/4P |
High current density due to double mesa technology
|
|
IPT1208-CEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1208-CEB
|
225Kb/4P |
High current density due to double mesa technology
|
|
IPT1208-CEF
|
234Kb/4P |
High current density due to double mesa technology
|
|
IPT1208-SEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1208-SEB
|
225Kb/4P |
High current density due to double mesa technology
|
|
IPT1208-SEF
|
234Kb/4P |
High current density due to double mesa technology
|