| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Samsung semiconductor |
IRF131
|
211Kb/5P |
N-CHANNEL POWER MOSFETS
|
Fairchild Semiconductor |
IRF131
|
180Kb/6P |
N-Channel Power MOSFETs, 20 A, 60-100 V
|
Inchange Semiconductor ... |
IRF131
|
198Kb/2P |
N-Channel MOSFET Transistor
|
International Rectifier |
IRF1310N
|
96Kb/8P |
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
|
Inchange Semiconductor ... |
IRF1310N
|
338Kb/2P |
N-Channel MOSFET Transistor
|
International Rectifier |
IRF1310NL
|
156Kb/10P |
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
|
Kersemi Electronic Co.,... |
IRF1310NL
|
1Mb/10P |
Advanced Process Technology
|
Inchange Semiconductor ... |
IRF1310NL
|
300Kb/2P |
Isc N-Channel MOSFET Transistor
|
International Rectifier |
IRF1310NLPBF
|
725Kb/11P |
HEXFET Power MOSFET
|
|
IRF1310NPBF
|
592Kb/8P |
HEXFET POWER MOSFET
|
|
IRF1310NPBF
|
599Kb/9P |
ADVANCED PROCESS TECHNOLOGY
|
|
IRF1310NPBF
|
599Kb/9P |
ADVANCED PROCESS TECHNOLOGY
|
|
IRF1310NS
|
156Kb/10P |
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
|
Kersemi Electronic Co.,... |
IRF1310NS
|
1Mb/10P |
Fully Avalanche Rated
|
Inchange Semiconductor ... |
IRF1310NS
|
189Kb/2P |
Isc N-Channel MOSFET Transistor
|
International Rectifier |
IRF1310NSPBF
|
725Kb/11P |
HEXFET Power MOSFET
|
|
IRF1310NSPBF
|
726Kb/11P |
ADVANCED PROCESS TECHNOLOGY
|
|
IRF1310NSPBF
|
726Kb/11P |
ADVANCED PROCESS TECHNOLOGY
|
|
IRF1310NSTRLPBF
|
726Kb/11P |
Advanced Process Technology
|
|
IRF1310S
|
361Kb/8P |
Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)
|
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