| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
International Rectifier |
IRFR4105ZPBF
|
335Kb/11P |
Advanced Process Technology
|
|
IRFR4105ZLPBF
|
335Kb/11P |
Advanced Process Technology
|
Kersemi Electronic Co.,... |
IRFR4105ZTRL
|
4Mb/12P |
AUTOMOTIVE GRADE
|
VBsemi Electronics Co.,... |
IRFR4105ZTRPBF
|
988Kb/6P |
N-Channel 6 0-V (D-S) MOSFET
|
International Rectifier |
IRFR4105PBF
|
244Kb/11P |
Ultra Low On-Resistance
|
|
IRFR4105PBF
|
244Kb/11P |
Ultra Low On-Resistance
|
|
IRFR4105PBF
|
244Kb/11P |
Ultra Low On-Resistance
|
Kersemi Electronic Co.,... |
IRFR4105PBF
|
3Mb/10P |
Ultra Low On-Resistance
|
|
IRFR4105PBF
|
3Mb/10P |
Ultra Low On-Resistance
|
International Rectifier |
IRFR4105PBF
|
240Kb/10P |
HEXFET Power MOSFET
|
|
IRFR4105PBF
|
244Kb/11P |
Ultra Low On-Resistance
|
Guangdong Youtai Semico... |
IRFR4105TR
|
490Kb/7P |
55V N-Channel MOSFET
|
Kersemi Electronic Co.,... |
IRFR4105TRL
|
4Mb/10P |
Advanced Planar Technology
|
International Rectifier |
IRFR4105TRLPBF
|
244Kb/11P |
Ultra Low On-Resistance
|
|
IRFR4105TRPBF
|
244Kb/11P |
Ultra Low On-Resistance
|
Inchange Semiconductor ... |
IRFR4105Z
|
335Kb/2P |
N-Channel MOSFET Transistor
|
International Rectifier |
IRFR4105Z
|
206Kb/11P |
Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A)
|
Kersemi Electronic Co.,... |
IRFR4105Z
|
1Mb/11P |
Advanced Process Technology
|
Inchange Semiconductor ... |
IRFR4104
|
335Kb/2P |
N-Channel MOSFET Transistor
|
International Rectifier |
IRFR4104
|
190Kb/12P |
Advanced Process Technology
|
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