| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 ZP Semiconductor |
CJND2007
|
959Kb/2P |
D ual N-Channel MOSFET
|
 Jiangsu Changjiang Elec... |
CJND2007
|
647Kb/5P |
Dual N-Channel MOSFET
|
|
CJND2010
|
566Kb/5P |
N-channel MOSFET
|
 ZP Semiconductor |
CJND8804
|
1,021Kb/2P |
D ual N-Channel MOSFET
|
 Jiangsu Changjiang Elec... |
CJND8804
|
1Mb/5P |
Dual N-Channel MOSFET
|
 Maxim Integrated Produc... |
DS8500-JND+
|
107Kb/6P |
HART Modem
Rev 0; 10/08 |
|
DS8500-JND+
|
170Kb/7P |
HART Modem
Rev 1; 2/09 |
|
DS8500-JND+
|
474Kb/7P |
HART Modem
19-7581; Rev 3; 2/20 |
 Panasonic Semiconductor |
ELJND102DF
|
571Kb/15P |
Chip inductors
|
|
ELJND102DFB
|
92Kb/5P |
1. High Frequency Use (Non Magnetic Core) RF, ND, NC, NA
|
|
ELJND102JF
|
571Kb/15P |
Chip inductors
|
|
ELJND102JFB
|
92Kb/5P |
1. High Frequency Use (Non Magnetic Core) RF, ND, NC, NA
|
|
ELJND102KF
|
571Kb/15P |
Chip inductors
|
|
ELJND102KFB
|
92Kb/5P |
1. High Frequency Use (Non Magnetic Core) RF, ND, NC, NA
|
|
ELJND102MF
|
571Kb/15P |
Chip inductors
|
|
ELJND102MZFB
|
92Kb/5P |
1. High Frequency Use (Non Magnetic Core) RF, ND, NC, NA
|
|
ELJND10NDF
|
183Kb/8P |
High Frequency Use (Non Magnetic Core) RF, RE, ND, NC, NA
00 Sep. 2010 |
|
ELJND10NDFB
|
169Kb/8P |
Fixed Inductors (Chip Inductors)
|
|
ELJND10NDFB
|
92Kb/5P |
1. High Frequency Use (Non Magnetic Core) RF, ND, NC, NA
|
|
ELJND10NDFB
|
162Kb/8P |
Fixed Inductors (Chip Inductors)
|