| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
NEC |
NE202
|
329Kb/9P |
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|
Renesas Technology Corp |
NE20200
|
570Kb/8P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1988 |
NEC |
NE20248
|
329Kb/9P |
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|
|
NE20283A
|
329Kb/9P |
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|
Renesas Technology Corp |
NE202930
|
217Kb/8P |
Silicon NPN Epitaxial High Frequency Transistor
|
California Eastern Labs |
NE202930
|
571Kb/7P |
Silicon NPN Epitaxial High Frequency Transistor
|
Renesas Technology Corp |
NE202930-T1
|
217Kb/8P |
Silicon NPN Epitaxial High Frequency Transistor
|
California Eastern Labs |
NE202930-T1
|
571Kb/7P |
Silicon NPN Epitaxial High Frequency Transistor
|
|
NE202930-T1-A
|
571Kb/7P |
Silicon NPN Epitaxial High Frequency Transistor
|
Renesas Technology Corp |
NE202930
|
228Kb/8P |
Silicon NPN Epitaxial High Frequency Transistor
|
NEC |
NE202XX
|
329Kb/9P |
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|
|
NE202XX-1.4
|
329Kb/9P |
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|
German ▼ 
English
Chinese
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand