| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
NTE Electronics |
NTE330
|
21Kb/2P |
Germanium PNP Transistor High Power Switch
|
|
NTE3300
|
19Kb/2P |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
|
NTE3301
|
19Kb/2P |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
|
NTE3302
|
19Kb/2P |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
|
NTE3303
|
19Kb/2P |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
|
NTE3310
|
18Kb/2P |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
|
NTE3311
|
18Kb/2P |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
|
NTE3312
|
18Kb/2P |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
|
NTE332
|
21Kb/2P |
Silicon Complementary Transistors Audio Power Amp, Switch
|
|
NTE3320
|
20Kb/2P |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
|
NTE3321
|
20Kb/2P |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
|
NTE3322
|
20Kb/2P |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
|
NTE3323
|
20Kb/2P |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
|
NTE335
|
59Kb/2P |
Silicon NPN RF Power Transistor Designed for power amplifier
|
|
NTE336
|
59Kb/2P |
Silicon NPN RF Power Transistor Designed for power amplifier
|
|
NTE337
|
22Kb/2P |
Silicon NPN Transistor RF Power Amp, Driver
|
|
NTE338
|
23Kb/2P |
Silicon NPN Transistor RF Power Amp, Driver
|
|
NTE338F
|
23Kb/2P |
Silicon NPN Transistor RF Power Amp, Driver
|
|
NTE339
|
75Kb/2P |
Silicon NPN Transistor RF Power Output
|
|
NTE30
|
24Kb/2P |
Silicon Complementary Transistors High Power, High Current Switch
|
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