| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Linear Technology |
RH1814M
|
88Kb/8P |
Quad 3mA, 100MHz, 750V/關s Operational Amplifier
|
|
RH1814M
|
648Kb/8P |
Quad 3mA, 100MHz, 750V/s Operational Amplifier
|
Analog Devices |
RH1814M
|
261Kb/8P |
Quad 3mA, 100MHz, 750V/μs Operational Amplifier
Rev. D |
Linear Technology |
RH1814M
|
648Kb/8P |
Quad 3mA, 100MHz, 750V/s Operational Amplifier
|
|
RH1814
|
130Kb/2P |
Dual 3mA, 100MHz, 750V/s Operational Amplifi er
|
WALSIN TECHNOLOGY CORPO... |
RH18G0R5A201CG
|
3Mb/12P |
High Q and low ESR performance at high frequency
|
|
RH18G0R5A201CT
|
3Mb/12P |
High Q and low ESR performance at high frequency
|
|
RH18G0R5A251CG
|
3Mb/12P |
High Q and low ESR performance at high frequency
|
|
RH18G0R5A251CT
|
3Mb/12P |
High Q and low ESR performance at high frequency
|
|
RH18G0R5B201CG
|
3Mb/12P |
High Q and low ESR performance at high frequency
|
|
RH18G0R5B201CT
|
3Mb/12P |
High Q and low ESR performance at high frequency
|
|
RH18G0R5B251CG
|
3Mb/12P |
High Q and low ESR performance at high frequency
|
|
RH18G0R5B251CT
|
3Mb/12P |
High Q and low ESR performance at high frequency
|
|
RH18G0R5C201CG
|
3Mb/12P |
High Q and low ESR performance at high frequency
|
|
RH18G0R5C201CT
|
3Mb/12P |
High Q and low ESR performance at high frequency
|
|
RH18G0R5C251CG
|
3Mb/12P |
High Q and low ESR performance at high frequency
|
|
RH18G0R5C251CT
|
3Mb/12P |
High Q and low ESR performance at high frequency
|
|
RH18G0R5F201CG
|
3Mb/12P |
High Q and low ESR performance at high frequency
|
|
RH18G0R5F201CT
|
3Mb/12P |
High Q and low ESR performance at high frequency
|
|
RH18G0R5F251CG
|
3Mb/12P |
High Q and low ESR performance at high frequency
|
German ▼ 
English
Chinese
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand