| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Sanken electric |
RU30
|
23Kb/1P |
Fast-Recovery Rectifier Diodes
|
Shenzhen Taychipst Elec... |
RU30
|
847Kb/1P |
Fast-Recovery Rectifier Diodes
|
Shenzhen Luguang Electr... |
RU30
|
170Kb/2P |
High Efficiency Rectifiers
|
Diode Semiconductor Kor... |
RU30
|
274Kb/2P |
HIGH EFFICIENCY RECTIFIERS
|
Turck, Inc. |
RU300D-M30M-LIU8X2-H1141
|
1Mb/5P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU300D-M30M-UPN8X2-H1141
|
1Mb/4P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU300U-M30E-2UP8X2T-H1151
|
1Mb/4P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU300U-M30E-LI8X2-H1151
|
424Kb/4P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU300U-M30E-LU8X2-H1151
|
428Kb/4P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU300U-M30M-2UP8X2-H1151
|
737Kb/4P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
Ruichips Semiconductor ... |
RU30100L
|
286Kb/9P |
N-Channel Advanced Power MOSFET
|
VBsemi Electronics Co.,... |
RU30100L
|
1,002Kb/7P |
N-Channel 30-V (D-S) MOSFET
|
Ruichips Semiconductor ... |
RU30100M
|
392Kb/8P |
N-Channel Advanced Power MOSFET
|
|
RU30100R
|
313Kb/9P |
N-Channel Advanced Power MOSFET
|
|
RU30105L
|
300Kb/9P |
N-Channel Advanced Power MOSFET
|
|
RU30105R
|
311Kb/9P |
N-Channel Advanced Power MOSFET
|
|
RU30106L
|
303Kb/9P |
N-Channel Advanced Power MOSFET
|
|
RU3010H
|
273Kb/9P |
N-Channel Advanced Power MOSFET
|
|
RU30120L
|
283Kb/9P |
N-Channel Advanced Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
RU30120L
|
1Mb/7P |
N-Channel MOSFET uses advanced SGT technology
|
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