| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 SiTime Corp. |
SIT5001
|
755Kb/12P |
1-80 MHz MEMS TCXO and VCTCXO
|
|
SIT5021
|
486Kb/13P |
1-220 MHz High Performance Differential (VC) TCXO
|
|
SIT5022
|
485Kb/13P |
220-625 MHz High Performance Differential (VC) TCXO
|
|
SIT5155
|
1Mb/36P |
0.5 ppm Elite Platform Precision Super-TCXO for GNSS/GPS
|
|
SIT5156
|
1Mb/36P |
1 to 60 MHz, (+-)0.5 ppm Elite Platform Super-TCXO
|
|
SIT5157
|
1Mb/36P |
60 to 220 MHz, (+-)0.5 ppm Elite Platform Super-TCXO
|
|
SIT5356
|
1Mb/36P |
1 to 60 MHz,(+-)0.1 to (+-)0.25 ppm Elite Platform Precision Super-TCXO
|
|
SIT5357
|
1Mb/36P |
60 to 220 MHz, (+-)0.1 to (+-)0.25 ppm Elite Platform Precision Super-TCXO
|
 NTE Electronics |
SIT560M200
|
18Kb/2P |
105 SNAP-IN ALUMINUM ELECTROLYTIC
|
|
SIT560M250
|
18Kb/2P |
105 SNAP-IN ALUMINUM ELECTROLYTIC
|
|
SIT560M50
|
18Kb/2P |
105 SNAP-IN ALUMINUM ELECTROLYTIC
|
 Hunan Silicon Internet ... |
SIT 1040
|
840Kb/17P |
5V, ±40V BUS Protection, 1Mbps High Speed CAN transceiver
V1.16 April 2023 |
 Diotec Semiconductor |
SIT08C065
|
637Kb/3P |
Silicon Carbide Schottky Diodes Siliziumkarbid Schottky-Dioden
2024-05-08 |
 NTE Electronics |
SIT10000M200
|
18Kb/2P |
105 SNAP-IN ALUMINUM ELECTROLYTIC
|
|
SIT10000M250
|
18Kb/2P |
105 SNAP-IN ALUMINUM ELECTROLYTIC
|
|
SIT10000M50
|
18Kb/2P |
105 SNAP-IN ALUMINUM ELECTROLYTIC
|
|
SIT1000M200
|
18Kb/2P |
105 SNAP-IN ALUMINUM ELECTROLYTIC
|
|
SIT1000M250
|
18Kb/2P |
105 SNAP-IN ALUMINUM ELECTROLYTIC
|
|
SIT1000M50
|
18Kb/2P |
105 SNAP-IN ALUMINUM ELECTROLYTIC
|
|
SIT100M200
|
18Kb/2P |
105 SNAP-IN ALUMINUM ELECTROLYTIC
|