ST3426 Datenblatt, PDF

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Stanson Technology	ST3421SRG	424Kb/6P	P Channel Enhancement Mode MOSFET
	ST3422A	338Kb/6P	The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	ST3424	707Kb/6P	N Channel Enhancement Mode MOSFET
	ST3400	352Kb/6P	N Channel Enhancement Mode MOSFET
	ST3400S23RG	352Kb/6P	N Channel Enhancement Mode MOSFET
VBsemi Electronics Co.,...	ST3400S23RG	493Kb/9P	N-Channel 30-V (D-S) MOSFET
List of Unclassifed Man...	ST3400S23RG_V2	402Kb/6P	N Channel Enhancement Mode MOSFET
Stanson Technology	ST3400SRG	547Kb/6P	The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
VBsemi Electronics Co.,...	ST3400SRG	493Kb/9P	N-Channel 30-V (D-S) MOSFET
Stanson Technology	ST3401	200Kb/6P	P Channel Enhancement Mode MOSFET
VBsemi Electronics Co.,...	ST3401	490Kb/9P	P-Channel 30 V (D-S) MOSFET
Stanson Technology	ST3401M23RG	174Kb/6P	P Channel Enhancement Mode MOSFET
VBsemi Electronics Co.,...	ST3401M23RG	491Kb/9P	P-Channel 30 V (D-S) MOSFET
List of Unclassifed Man...	ST3401M23RG_V2	174Kb/6P	P Channel Enhancement Mode MOSFET
Stanson Technology	ST3401S23RG	200Kb/6P	P Channel Enhancement Mode MOSFET
VBsemi Electronics Co.,...	ST3401S23RG	491Kb/9P	P-Channel 30 V (D-S) MOSFET
Stanson Technology	ST3401SRG	212Kb/6P	ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
VBsemi Electronics Co.,...	ST3401SRG	490Kb/9P	P-Channel 30 V (D-S) MOSFET
Stanson Technology	ST3402	386Kb/6P	N Channel Enhancement Mode MOSFET
VBsemi Electronics Co.,...	ST3402	481Kb/9P	N-Channel 30-V (D-S) MOSFET

ST3426 Datenblatt, PDF

ST3426 Datasheet ,PDF

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