| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 STMicroelectronics |
STD13N60M2
|
1Mb/23P |
Extremely low gate charge
12-Sep-2016 |
|
STD13N60M6
|
526Kb/16P |
N-channel 600 V, 320 m typ., 10 A, MDmesh M6 Power MOSFET in a DPAK package
17-Oct-2019 |
|
STD13N65M2
|
556Kb/16P |
100% avalanche tested
18-Dec-2014 |
|
STD13N50DM2AG
|
544Kb/16P |
Automotive-grade N-channel 500 V, 320 m typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
31-Oct-2019 |
|
STD13NM50N
|
665Kb/18P |
N-channel 500 V, 0.285 Ω typ., 12 A MDmesh™ II Power MOSFET in a DPAK package
22-Oct-2018 |
 Inchange Semiconductor ... |
STD13NM60N
|
300Kb/2P |
Isc N-Channel MOSFET Transistor
|
 STMicroelectronics |
STD13NM60N
|
1Mb/24P |
Low gate input resistance
19-Jun-2015 |
|
STD13NM60N
|
989Kb/21P |
N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages
14-Nov-2012 |
 Inchange Semiconductor ... |
STD13NM60ND
|
323Kb/2P |
isc N-Channel Mosfet Transistor
|
 STMicroelectronics |
STD13NM60ND
|
1Mb/21P |
N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK
15-May-2013 |
 Sirectifier Semiconduct... |
STD130
|
470Kb/4P |
Thyristor-Diode Modules, Diode-Thyristor Modules
|
 STMicroelectronics |
STD13003
|
263Kb/8P |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Sep-2001 |
 AUK corp |
STD13003
|
270Kb/3P |
NPN Silicon Power Transistor
|
|
STD13003
|
246Kb/4P |
NPN Silicon Power Transistor
|
 KODENSHI_AUK CORP. |
STD13003D
|
323Kb/6P |
NPN Silicon Power Transistor
|
 AUK corp |
STD13003L
|
271Kb/3P |
NPN Silicon Power Transistor
|
 KODENSHI_AUK CORP. |
STD13003L
|
284Kb/6P |
NPN Silicon Power Transistor
|
 AUK corp |
STD13003Q
|
246Kb/4P |
NPN Silicon Power Transistor
|
 KODENSHI_AUK CORP. |
STD13003Q
|
294Kb/6P |
SWITCHING REGULATOR APPLICATIONS
|
 STMicroelectronics |
STD13003T4
|
271Kb/8P |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Sep-2001 |