| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 VBsemi Electronics Co.,... |
STN4420
|
1Mb/9P |
N-Channel 20V (D-S) MOSFET
|
 Stanson Technology |
STN4426
|
362Kb/6P |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4402
|
361Kb/6P |
N Channel Enhancement Mode MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
STN4402
|
1Mb/4P |
N-Channel MOSFET uses advanced trench technology
|
 VBsemi Electronics Co.,... |
STN4402
|
1Mb/9P |
N-Channel 20V (D-S) MOSFET
|
 List of Unclassifed Man... |
STN4402_V1
|
361Kb/6P |
N Channel Enhancement Mode MOSFET
|
 Stanson Technology |
STN4412
|
489Kb/6P |
N Channel Enhancement Mode MOSFET
|
|
STN4412S8RG
|
489Kb/6P |
N Channel Enhancement Mode MOSFET
|
 VBsemi Electronics Co.,... |
STN4412S8RG
|
1Mb/9P |
N-Channel 20V (D-S) MOSFET
|
 Stanson Technology |
STN4412S8TG
|
489Kb/6P |
N Channel Enhancement Mode MOSFET
|
|
STN4416
|
966Kb/6P |
STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
 EVER SEMICONDUCTOR CO.,... |
STN4438
|
891Kb/6P |
8.2A N Channel Enhancement Mode MOSFET
Rev:2023A2 |
 Stanson Technology |
STN4438
|
269Kb/6P |
STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
 VBsemi Electronics Co.,... |
STN4438
|
995Kb/9P |
N-Channel 60-V (D-S) MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
STN4440
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 Stanson Technology |
STN4440
|
637Kb/6P |
STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN444DN
|
812Kb/8P |
N Channel Enhancement Mode MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
STN4480
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 Stanson Technology |
STN4480
|
742Kb/6P |
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
 VBsemi Electronics Co.,... |
STN4480S8RG
|
1Mb/8P |
N-Channel 100-V (D-S) MOSFET
|