| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
VBsemi Electronics Co.,... |
VB3222
|
676Kb/9P |
Dual N-Channel 20 V (D-S) MOSFET
|
|
VB3222
|
714Kb/9P |
Dual N-Channel 20 V (D-S) MOSFET
|
|
VB3222A
|
567Kb/7P |
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
|
|
VB3222
|
714Kb/9P |
Dual N-Channel 20 V (D-S) MOSFET
|
STMicroelectronics |
VB325SP
|
190Kb/9P |
HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C.
rev. A |
|
VB325SP
|
226Kb/9P |
HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C.
Sep-2013 |
|
VB325SP-E
|
226Kb/9P |
HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C.
Sep-2013 |
|
VB325SPTR-E
|
197Kb/9P |
HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C.
Nov-2003 |
|
VB326
|
193Kb/9P |
HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C
Nov-2003 |
|
VB326SP
|
193Kb/9P |
HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C
Nov-2003 |
France Joint |
VB32X42X4
|
384Kb/5P |
STANDARD SHAFT SEALS
|
|
VB32X45X4
|
384Kb/5P |
STANDARD SHAFT SEALS
|
New Jersey Semi-Conduct... |
VB30
|
102Kb/1P |
These rectifiers offer high voltage ranges in minimum-sized
|
Extech Instruments Corp... |
VB300
|
140Kb/1P |
3-Axis G-Force Datalogger
|
Vishay Siliconix |
VB30100C
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
19-May-08 |
|
VB30100C
|
165Kb/6P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB30100C
|
102Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
20-Jun-2018 |
Inchange Semiconductor ... |
VB30100C
|
399Kb/3P |
Schottky Barrier Rectifier
|
Vishay Siliconix |
VB30100C-E3
|
152Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
11-Sep-13 |
|
VB30100C-E3
|
178Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
13-Dec-16 |
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