| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 VBsemi Electronics Co.,... |
VB4290A
|
767Kb/9P |
Dual P-Channel 20 V (D-S) MOSFET
|
|
VB4290
|
712Kb/9P |
Dual P-Channel 20 V (D-S) MOSFET
|
 France Joint |
VB42X52X4
|
384Kb/5P |
STANDARD SHAFT SEALS
|
 New Jersey Semi-Conduct... |
VB40
|
102Kb/1P |
These rectifiers offer high voltage ranges in minimum-sized
|
 Extech Instruments Corp... |
VB400
|
500Kb/1P |
Pen Vibration Meter
|
 Inchange Semiconductor ... |
VB40100C
|
314Kb/2P |
Schotty Barrier Diode
|
 Vishay Siliconix |
VB40100C
|
102Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
20-Jun-2018 |
|
VB40100C
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
26-May-08 |
|
VB40100C-E3
|
160Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
14-Nov-14 |
|
VB40100C-E3
|
155Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
14-Nov-14 |
|
VB40100C-E3
|
1Mb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
19-Jun-2018 |
 Inchange Semiconductor ... |
VB40100C-E3
|
314Kb/2P |
Schotty Barrier Diode
|
 Vishay Siliconix |
VB40100C-E3/4W
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
26-May-08 |
|
VB40100C-E3/4W
|
157Kb/5P |
Dual High-Voltage Trench MOS barrier Schottky Rectifier
19-Oct-11 |
|
VB40100C-E3/8W
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
26-May-08 |
|
VB40100C-E3/8W
|
157Kb/5P |
Dual High-Voltage Trench MOS barrier Schottky Rectifier
19-Oct-11 |
|
VB40100C-M3
|
91Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
03-Jan-17 |
|
VB40100C-M3
|
79Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
15-May-13 |
|
VB40100CHM3
|
91Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
03-Jan-17 |
|
VB40100G
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A
19-May-08 |