| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Guangdong Huixin Electr... |
H30N10HT
|
703Kb/6P |
100V SGT N-Channel MOSFET
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H30N15HF
|
885Kb/6P |
150V Single N-Channel MOSFET
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H30N3FA
|
912Kb/6P |
30V Trench Single N-Channel MOSFET
|
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H30N3FB
|
799Kb/6P |
30V Single N-Channel MOSFET
|
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H30N4FB
|
786Kb/5P |
40V Single N-Channel MOSFET
|
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H30N50P
|
1Mb/6P |
500V N-Channel MOSFET
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H30N50W
|
548Kb/6P |
500V N-Channel MOSFET
|
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H30N6FA
|
487Kb/6P |
60V Single N-Channel MOSFET
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H30P4D
|
963Kb/6P |
40V Single P-Channel MOSFET
|
 Infineon Technologies A... |
H30PR5
|
1Mb/15P |
Reverse Conducting IGBT with monolithic body diode
V2.3 2019-09-20 |
|
H30R100
|
330Kb/12P |
Soft Switching Series
Rev. 2.2 Nov 08 |
|
H30R1103
|
2Mb/15P |
Reverse conducting IGBT with monolithic body diode
Rev.2.1,2015-01-26 |
|
H30R120
|
977Kb/12P |
IGBT with monolithic body diode for soft switching Applications
Rev. 2.2 May 06 |
|
H30R1202
|
386Kb/12P |
Reverse Conducting IGBT with monolithic body diode
Rev. 1.2 May 06 |
|
H30R1202
|
363Kb/12P |
Soft Switching Series
Rev. 1.5 Dec. 09 |
|
H30R1203
|
33Kb/1P |
Material Content Data Sheet
21. September 2015 |
|
H30R1353
|
2Mb/15P |
Reverse conducting IGBT with monolithic body diode
Rev.2.2,2015-01-26 |
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H30R1602
|
396Kb/12P |
TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode
Rev. 2.1 Nov 09 |
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H30R90
|
304Kb/12P |
Reverse Conducting IGBT with monolithic body diode
Rev. 2.2 Nov 08 |
|
H30SR5
|
1Mb/15P |
Reverse conducting IGBT with monolithic body diode
V2.2 2019-09-19 |