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Teilenummer	PXFE211507FC-V1-R2

Bauteilbeschribung	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 ??2170 MHz

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Hersteller	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Ähnliche Beschreibung - PXFE211507FC-V1-R2

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Infineon Technologies A...	PXFC211507SC	201Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz Rev. 02, 2015-03-03
	PTFB213208FV	221Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz Rev. 02, 2012-07-03
	PTFB212507SH	193Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 ??2170 MHz Rev. 03, 2015-10-30
	PTAC210802FC	650Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz Rev. 05.2, 2016-06-17
	PXAD214218FV	391Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz Rev. 02.2, 2017-03-30
Cree, Inc	PXAD214218FV	524Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz
	PTFB210801FA	636Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz
	PTFB213208FV	659Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 - 2170 MHz
WOLFSPEED, INC.	PXAD214218FV	524Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 – 2170 MHz Rev. 04, 2023-06-23
WOLFSPEED, INC.	PXFE211507FC	763Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz Rev. 04, 2023-06-28