PXFE211507FC-V1-R2 Datenblatt(PDF) - Cree, Inc

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PXFE211507FC-V1-R2 Datenblatt (PDF) - Cree, Inc

PXFE211507FC-V1-R2 Datasheet PDF - Cree, Inc


Teilenummer	PXFE211507FC-V1-R2

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Filegröße	587.63 Kbytes

Page	8 Pages

Hersteller	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Bauteilbeschribung

Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 ??2170 MHz

PXFE211507FC-V1-R2 Datasheet (PDF)

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PXFE211507FC-V1-R2 Datasheet PDF - Cree, Inc


Teilenummer	PXFE211507FC-V1-R2

Download	PXFE211507FC-V1-R2 Click to download

Filegröße	587.63 Kbytes

Page	8 Pages

Hersteller	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Bauteilbeschribung	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 ??2170 MHz

PXFE211507FC-V1-R2 Datenblatt (HTML) - Cree, Inc

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Ähnliche Teilenummer - PXFE211507FC-V1-R2

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
WOLFSPEED, INC.	PXFE211507FC-V1-R2	763Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz Rev. 04, 2023-06-28

Ähnliche Beschreibung - PXFE211507FC-V1-R2

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Infineon Technologies A...	PXFC211507SC	201Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz Rev. 02, 2015-03-03
	PTFB213208FV	221Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz Rev. 02, 2012-07-03
	PTFB212507SH	193Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 ??2170 MHz Rev. 03, 2015-10-30
	PTAC210802FC	650Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz Rev. 05.2, 2016-06-17
	PXAD214218FV	391Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz Rev. 02.2, 2017-03-30
Cree, Inc	PXAD214218FV	524Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz
	PTFB210801FA	636Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz
	PTFB213208FV	659Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 - 2170 MHz
WOLFSPEED, INC.	PXAD214218FV	524Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 – 2170 MHz Rev. 04, 2023-06-23
WOLFSPEED, INC.	PXFE211507FC	763Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz Rev. 04, 2023-06-28

Über Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.

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