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Teilenummer	EVALMASTERGAN4

Bauteilbeschribung	Demonstration board for MASTERGAN4 high power density half-bridge high voltage driver with two 650 V enhanced mode GaN HEMT

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Infineon Technologies A...	GTVA220701FA	862Kb / 4P	Thermally-Enhanced High Power RF GaN HEMT Rev. 01, 2015-08-18
	GTVA221701FA	616Kb / 4P	Thermally-Enhanced High Power RF GaN HEMT Rev. 01, 2015-07-27
	GTVA261701FA	858Kb / 4P	Thermally-Enhanced High Power RF GaN HEMT Rev. 01, 2015-05-29
ON Semiconductor	NCP51820	787Kb / 20P	High Speed Half-Bridge Driver for GaN Power Switches August, 2020 ??Rev. 2
STMicroelectronics	MASTERGAN4	396Kb / 14P	High power density 600V half-bridge driver with two enhancement mode GaN Power HEMT
ON Semiconductor	NCP51810	774Kb / 20P	High Speed Half-Bridge Driver for GaN Power Switches May, 2022 - Rev. 3
STMicroelectronics	MASTERGAN1	529Kb / 27P	High power density 600V Half bridge driver with two enhancement mode GaN HEMT 21-Oct-2020
STMicroelectronics	MASTERGAN2	680Kb / 29P	High power density 600V Half bridge driver with two enhancement mode GaN HEMT 21-Jun-2021
Rohm	BM3G007MUV-LB	1Mb / 29P	650 V GaN HEMT Power Stage 13.Jan.2023 Rev.001
Rohm	BM3G015MUV-LB	1Mb / 29P	650 V GaN HEMT Power Stage 13.Jan.2023 Rev.001