Features
 AEC-Q101 qualified
 Maximum junction temperature: TJ = 175 °C
 Logic level gate drive
 High speed switching series
 Minimized tail current
 VCE(sat) = 1.7 V (typ.) @ IC = 30 A
 Low VF soft recovery co-packaged diode
 Tight parameters distribution
 Safer paralleling
 Low thermal resistance

Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the new HB series
of IGBTs, which represents an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.

Applications
 Ignition