STGW60H60DLFB Datenblatt(PDF) - STMicroelectronics

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STGW60H60DLFB Datenblatt (PDF) - STMicroelectronics

STGW60H60DLFB Datasheet PDF - STMicroelectronics


Teilenummer	STGW60H60DLFB

Download	STGW60H60DLFB Download

Filegröße	1499.47 Kbytes

Page	17 Pages

Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Bauteilbeschribung

Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

STGW60H60DLFB Datasheet (PDF)

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STGW60H60DLFB Datasheet PDF - STMicroelectronics


Teilenummer	STGW60H60DLFB

Download	STGW60H60DLFB Click to download

Filegröße	1499.47 Kbytes

Page	17 Pages

Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

Bauteilbeschribung	Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

STGW60H60DLFB Datenblatt (HTML) - STMicroelectronics

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STGW60H60DLFB Produktdetails

Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.6 V (typ.) @ IC = 60 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Low VF soft recovery co-packaged diode
• Lead free package

Applications
• Induction heating
• Microwave oven
• Resonant converters

Ähnliche Teilenummer - STGW60H60DLFB

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
STMicroelectronics	STGW60H65DF	1Mb / 13P	60 A, 650 V field stop trench gate IGBT with very fast diode 09-Jan-2013
	STGW60H65DFB	1Mb / 19P	Low thermal resistance 17-Apr-2015
	STGW60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 22-Jul-2019
	STGW60H65DFB-4	556Kb / 15P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 20-Jun-2019
	STGW60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 22-Jul-2019

Ähnliche Beschreibung - STGW60H60DLFB

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
STMicroelectronics	STGW60V60DF	1Mb / 16P	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed 21-Oct-2013
	STGB30H60DFB	1Mb / 21P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
	STGB30H60DLFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
	STGFW20H65FB	1Mb / 20P	Trench gate field-stop IGBT, HB series 650 V, 20 A high speed 28-Aug-2014
	STGW30H60DFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed 04-Nov-2016
	STGW40H60DLFB	1Mb / 17P	Trench gate field-stop IGBT, HB series 600 V, 40 A high speed 18-Mar-2014
	STGB30H60DLLFBAG	1,009Kb / 17P	Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed 18-Oct-2016
	STGW60H65DFB-4	556Kb / 15P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 20-Jun-2019
	STGW60V60DF	1Mb / 20P	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed 28-Sep-2016
	STGW60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 22-Jul-2019

Über STMicroelectronics

Stmicroelectronics ist ein multinationaler Elektronik- und Halbleiterhersteller mit Sitz in Genf, Schweiz.

Das Unternehmen bietet eine breite Palette von Produkten an, darunter Mikrocontroller, Sensoren, Stromverstärker und integrierte Schaltkreise für verschiedene Anwendungen in den Märkten Automobil-, Industrie- und Verbrauchermärkte.

STMICROELECTRONICS wurde 1987 gegründet und ist in über 100 Ländern betrieben und ist eines der größten Halbleiterunternehmen der Welt.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.

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