Features
• 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8
- Virtually unlimited endurance 1000 trillion (1015) read/writes
- 151-year data retention (see “Data retention and endurance” on page 26)
- Infineon instant non-volatile write technology
- Advanced high-reliability ferroelectric process
• Fast serial peripheral interface (SPI)
- Up to 20 MHz frequency
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection scheme
- Hardware protection using the Write Protect (WP) pin
- Software protection using Write Disable (WRDI) instruction
- Software block protection for 1/4, 1/2, or entire array
• Device ID and serial number
- Manufacturer ID and product ID
- Unique device ID
- Serial number
• Dedicated 256-byte special sector F-RAM
- Dedicated special sector write and read
- Stored content can survive up to three standard reflow soldering cycles
• Low-power consumption
- 1.3 mA (typ) active current at 20 MHz
- 3.5 μA (typ) standby current
- 0.90 μA (typ) deep power down mode current
- 0.1 μA (typ) hibernate mode current
- 1.6 mA (typ) inrush current during power up
• Low-voltage operation
- CY15V108QI: VDD = 1.71 V to 1.89 V
- CY15B108QI: VDD = 1.8 V to 3.6 V
• Commercial and industrial operating temperature
- Commercial operating temperature: 0°C to +70°C
- Industrial operating temperature: –40°C to +85°C
• Packages
- 8-pin grid-array quad flat no-lead (GQFN) package (NRND)[1]
- 8-pin ultra-thin fine-pitch land grid array (UFLGA) package
• Restriction of hazardous substances (RoHS) compliant