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TLP352F Datenblatt (PDF) - Toshiba Semiconductor

TLP352F Datasheet PDF - Toshiba Semiconductor
Teilenummer TLP352F
Download  TLP352F Download
Filegröße   529.61 Kbytes
Page   21 Pages
Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Bauteilbeschribung Photocouplers GaAℓAs Infrared LED & Photo IC

TLP352F Datasheet (PDF)

Go To PDF Page Download Datenblatt
TLP352F Datasheet PDF - Toshiba Semiconductor

Teilenummer TLP352F
Download  TLP352F Click to download

Filegröße   529.61 Kbytes
Page   21 Pages
Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Bauteilbeschribung Photocouplers GaAℓAs Infrared LED & Photo IC

TLP352F Datenblatt (HTML) - Toshiba Semiconductor


TLP352F Produktdetails

Applications
• Industrial Inverters
• MOSFET Gate Drivers
• IGBT Gate Drivers
• Induction Cooktop and Home Appliances

General
The TLP352 is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode (LED)
optically coupled to an integrated high-gain, high-speed photodetector IC chip. It provides guaranteed performance
and specifications at temperatures up to 125 . The TLP352 has an internal Faraday shield that provides a
guaranteed Common-mode transient immunity of ±20 kV/μs. It has a totem-pole output that can both sink and
source current. The TLP352 is ideal for IGBT and power MOSFET gate drive.

Features
(1) Buffer logic type (totem pole output)
(2) Output peak current: ±2.5 A (max)
(3) Operating temperature: -40 to 125 
(4) Supply current: 3.0 mA (max)
(5) Supply voltage: 15 to 30 V
(6) Threshold input current: 5 mA (max)
(7) Propagation delay time: 200 ns (max)
(8) Common-mode transient immunity: ±20 kV/μs (min)
(9) Isolation voltage: 3750 Vrms (min)
(10) Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5 (Note 1)




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