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TLP352F Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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TLP352F Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
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1 / 21 page ![]() TLP352,TLP352F 1 Photocouplers GaAℓAs Infrared LED & Photo IC TLP352,TLP352F TLP352,TLP352F TLP352,TLP352F TLP352,TLP352F Start of commercial production 2011-05 1. 1. 1. 1. Applications Applications Applications Applications • Industrial Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. 2. 2. 2. General General General General The TLP352 is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. It provides guaranteed performance and specifications at temperatures up to 125 . The TLP352 has an internal Faraday shield that provides a guaranteed Common-mode transient immunity of ±20 kV/µs. It has a totem-pole output that can both sink and source current. The TLP352 is ideal for IGBT and power MOSFET gate drive. 3. 3. 3. 3. Features Features Features Features (1) Buffer logic type (totem pole output) (2) Output peak current: ±2.5 A (max) (3) Operating temperature: -40 to 125 (4) Supply current: 3.0 mA (max) (5) Supply voltage: 15 to 30 V (6) Threshold input current: 5 mA (max) (7) Propagation delay time: 200 ns (max) (8) Common-mode transient immunity: ±20 kV/µs (min) (9) Isolation voltage: 3750 Vrms (min) (10) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN60747-5-5 (Note 1) (Note 1) (Note 1) (Note 1) Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (D4) Option (D4) Option (D4) Option (D4). 2016-09-27 Rev.7.0 ©2016 Toshiba Corporation |
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