Key Features
▪ Single 1.7 V - 2.0 V Supply
▪ 128 Mbit (16 x 8 Mbit physical block) Flash Memory
▪ Serial Peripheral Interface (SPI) and Quad Peripheral Interface (QPI) Compatible
• Supports SPI Modes 0 and 3
• Supports Dual Output Read and Quad I/O Program and Read
• Supports QPI Program and Read
• 133 MHz Maximum Operating Frequency
• Clock-to-Output (tV1) of 6 ns
• Up to 65 Mbytes/s continuous data transfer rate
▪ Full Chip Erase
▪ Flexible, Optimized Erase Architecture for Code and Data Storage Applications
• 0.6 ms Typical Page Program (256 bytes) Time
• 60 ms Typical 4 kB Block Erase Time
• 200 ms Typical 32 kB Block Erase Time
• 350 ms Typical 64 kB Block Erase Time
▪ Hardware Controlled Locking of Status Registers via WP Pin
▪ 4 kbit secured One-Time Programmable Security Register
▪ Hardware Write Protection
▪ Serial Flash Discoverable Parameters (SFDP) Register
▪ Flexible Programming
• Byte/Page Program (1 to 256 bytes)
• Dual or Quad Input Byte/Page Program (1 to 256 bytes)
▪ Erase/Program Suspend and Resume
▪ JEDEC Standard Manufacturer and Device ID Read Methodology
▪ Low Power Dissipation
• 2 µA Deep Power-Down Current (Typical)
• 10 µA Standby current (Typical)
• 5 mA Active Read Current (Typical)
▪ Endurance: 100,000 program/erase cycles (4 kbytes, 32 kbytes or 64 kbytes blocks)
▪ Data Retention: 20 Years
▪ Industrial Temperature Range: -40 °C to +85 °C
▪ Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
• 8-pad DFN (6 x 5 x 0.6 mm)
• 21-ball die Ball Grid Array (dBGA - WLCSP)
• 21-ball low-profile die Ball Grid Array (dBGA - WLCSP)