1. General description
The GAN190-650FBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a
DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior
performance.
2. Features and benefits
• Enhancement mode - normally-off power switch
• Ultra high frequency switching capability
• No body diode
• Low gate charge, low output charge
• Qualified for standard applications
• ESD protection
• RoHS, Pb-free, REACH-compliant
• High efficiency and high power density
• Low package inductance and low package resistance
3. Applications
• High power density and high efficiency power conversion
• AC-to-DC converters, totem pole PFC
• DC-to-DC converters
• Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
• Datacom and telecom (AC-to-DC and DC-to-DC) converters
• Motor drives
• Solar (PV) inverters
• Class D audio amplifiers, TV PSU and LED drivers