1. General description
The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15
bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering
superior performance.
2. Features and benefits
• Enhancement mode - normally-off power switch
• Ultra high frequency switching capability
• No body diode
• Low gate charge, low output charge
• Qualified for standard applications
• ESD protection
• RoHS, Pb-free, REACH-compliant
• High efficiency and high power density
• Wafer Level Chip-Scale Package (WLCSP) 3.5 mm x 2.13 mm
3. Applications
• High power density and high efficiency power conversion
• AC-to-DC converters, (secondary stage)
• High frequency DC-to-DC converters in 48 V systems
• Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
• Datacom and telecom (AC-to-DC and DC-to-DC) converters
• Motor drives
• LiDAR (non-automotive)
• Class D audio amplifiers