| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
VIGO Photonics S.A. |
PVM-10.6-1
|
669Kb / 2P |
2.0 – 12.0 μm HgCdTe ambient temperature photovoltaic multiple junction detector
08/11/2020 |
|
PVM-2TE
|
763Kb / 2P |
2.0 – 12.0 μm HgCdTe two-stage thermoelectrically cooled photovoltaic multiple junction detectors
06/12/2021 |
|
PVMQ
|
661Kb / 2P |
2.0 – 12.0 μm HgCdTe ambient temperature photovoltaic multiple junction quadrant detector
09/11/2020 |
|
QM-10.6
|
880Kb / 2P |
3.0 – 12.0 μm and DC – 1 MHz HgCdTe four-channel IR detection module with photovoltaic quadrant geometry multiple junction detector
16/08/2021 |
|
QM-5
|
783Kb / 2P |
3.5 – 6.0 μm and DC – 1 MHz HgCdTe four-channel IR detection module with photovoltaic quadrant geometry detector
16/08/2021 |
|
UHSM-10.6
|
800Kb / 2P |
3.0 – 12.0 μm and over 1GHz HgCdTe ultra high speed IR detection module with photovoltaic detector
09/11/2020 |
|
UHSM-I-10.6
|
825Kb / 2P |
3.0 – 12.0 μm and over 700 MHz HgCdTe ultra high speed IR detection module with optically immersed photovoltaic detector
09/11/2020 |
|
UM-10.6
|
803Kb / 2P |
2.0 – 12.0 μm and DC – 70 MHz HgCdTe universal IR detection module with photovoltaic multiple junction detector
09/11/2020 |
|
UM-I-10.6
|
823Kb / 2P |
2.0 – 12.0 μm and DC – 100 MHz HgCdTe universal IR detection module with optically immersed photovoltaic multiple junction detector
09/11/2020 |
|
UM-I-6
|
825Kb / 2P |
3.0 – 6.7 μm and DC – 1 MHz HgCdTe universal IR detection module with optically immersed photovoltaic detector
14/09/2020 |
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