Description
The GTVA262711FA is a 300-watt (P3dB) GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency,
and a thermally-enhanced package with earless flange.
Features
• GaN on SiC HEMT technology
• Input matched
• Typical pulsed CW performance: 10 µs pulse
width, 10% duty cycle, 2690 MHz, 48 V
- Output power at P3dB = 300 W
- Efficiency = 62%
- Gain = 19.1 dB
• Human Body Model Class 1B (per ANSI/ESDA/
JEDEC JS-001)
• Capable of handling 10:1 VSWR @48 V, 70 W (CW)
output power
• Pb-free and RoHS-compliant