CGH27060F Datenblatt(PDF) - Cree, Inc

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CGH27060F Datenblatt (PDF) - Cree, Inc

CGH27060F Datasheet PDF - Cree, Inc


Teilenummer	CGH27060F

Download	CGH27060F Download

Filegröße	824.02 Kbytes

Page	8 Pages

Hersteller	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Bauteilbeschribung

60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX

CGH27060F Datasheet (PDF)

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CGH27060F Datasheet PDF - Cree, Inc


Teilenummer	CGH27060F

Download	CGH27060F Click to download

Filegröße	824.02 Kbytes

Page	8 Pages

Hersteller	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

Logo

Bauteilbeschribung	60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX

CGH27060F Datenblatt (HTML) - Cree, Inc

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Ähnliche Teilenummer - CGH27060F

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
WOLFSPEED, INC.	CGH27060F	4Mb / 12P	60 W Peak, 28 V, GaN HEMT for Linear Communications from VHF to 3 GHz Rev. 5.2, 2022-11-11
Cree, Inc	CGH27060F-AMP	1Mb / 12P	60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Rev 5.0
	CGH27060F-TB	1Mb / 12P	60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Rev 5.0
	CGH27060F	1Mb / 12P	60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Rev 5.0

Ähnliche Beschreibung - CGH27060F

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Cree, Inc	CGH27015F	1Mb / 8P	15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Rev 1.7
	CGH27030F	791Kb / 8P	30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Rev 1.0
	CGH35015F	773Kb / 9P	15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Rev 1.6
	CGH35030F	760Kb / 8P	30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Rev 1.4
	CGH21240F	1Mb / 15P	240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Rev 3.0
	CGH25120F	1Mb / 12P	120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Rev 3.1
	CGH35015	1,011Kb / 12P	15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Rev 4.0
	CGH35030F	1Mb / 12P	30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Rev 4.0
	CGH55030F1	914Kb / 13P	30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Rev 4.0
WOLFSPEED, INC.	CGH55030F1-P1	1Mb / 13P	30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Rev. 4.2, 2022-12-13

Über Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.

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