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STAV58025P2 Datenblatt (PDF) - Innogration Technologies, Inc.

STAV58025P2 Datasheet PDF - Innogration Technologies, Inc.
Teilenummer STAV58025P2
Download  STAV58025P2 Download
Filegröße   1192.53 Kbytes
Page   6 Pages
Hersteller  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Bauteilbeschribung Gallium Nitride 50V, 25W, DC-6GHz RF Power Transistor

STAV58025P2 Datasheet (PDF)

Go To PDF Page Download Datenblatt
STAV58025P2 Datasheet PDF - Innogration Technologies, Inc.

Teilenummer STAV58025P2
Download  STAV58025P2 Click to download

Filegröße   1192.53 Kbytes
Page   6 Pages
Hersteller  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Bauteilbeschribung Gallium Nitride 50V, 25W, DC-6GHz RF Power Transistor

STAV58025P2 Datenblatt (HTML) - Innogration Technologies, Inc.


STAV58025P2 Produktdetails

Description
The STAV58025P2 is a 25 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz
It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package.
It can support CW, pulse or any modulated signal.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 5G, 4G wireless infrastructure
 Wideband or narrowband power amplifier
 Test instruments
 Civil pulse radar
 Jammer




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