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STAV58030J2 Datenblatt (PDF) - Innogration Technologies, Inc.

STAV58030J2 Datasheet PDF - Innogration Technologies, Inc.
Teilenummer STAV58030J2
Download  STAV58030J2 Download
Filegröße   1133.02 Kbytes
Page   6 Pages
Hersteller  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Bauteilbeschribung GaN HEMT 50V, 30W,4.0-6.0GHz RF Power Transistor

STAV58030J2 Datasheet (PDF)

Go To PDF Page Download Datenblatt
STAV58030J2 Datasheet PDF - Innogration Technologies, Inc.

Teilenummer STAV58030J2
Download  STAV58030J2 Click to download

Filegröße   1133.02 Kbytes
Page   6 Pages
Hersteller  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Bauteilbeschribung GaN HEMT 50V, 30W,4.0-6.0GHz RF Power Transistor

STAV58030J2 Datenblatt (HTML) - Innogration Technologies, Inc.


STAV58030J2 Produktdetails

Description
The STAV58030J2 is a single ended 30watt, GaN HEMT, ideal for 5G NR applications within 4.0-6.0GHz
It is an internally matched transistor capable of supporting CW, pulse or any modulated signal.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Sub-6GHz C band pulse or CW amplifier
 5G or LTE-U Class AB amplifier
 Wideband jammer




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