General Description1
The CY7C197B is a high-performance CMOS Asynchronous SRAM organized as 256K × 1 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected.

Features
• Fast access time: 12 ns and 25 ns
• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)
• CMOS for optimum speed/power
• TTL-compatible Inputs and Outputs
• Available in 24 DIP and 24 SOJ