Description
The CHK015A-SMA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and telecommunication
The CHK015A-SMA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry. The CHK015A-SMA is available in a ceramic-metal flange power package providing low parasitic and low thermal resistance.

Main Features
■ Wide band capability: up to 6GHz
■ Pulsed and CW operating modes
■ High power: > 15W
■ High Efficiency: up to 70%
■ DC bias: VDS = 50V @ ID_Q = 100mA
■ MTTF > 106 hours @ Tj = 200°C
■ RoHS Flange Ceramic package