Description
The CHK040A-SOA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and telecommunication
The CHK040A-SOA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry. The CHK040A-SOA is available in a cerami cmetal flange power package providing low
parasitic and low thermal resistance.

Main Features
■ Wide band capability: up to 3.5GHz
■ Pulsed and CW operating modes
■ High power: > 45W
■ High Efficiency: up to 70%
■ DC bias: VDS =50V @ ID_Q =300mA
■ MTTF > 106 hours @ Tj=200°C
■ RoHS Flange Ceramic package